
POWER COMPONENTS
A Soft recovery Diode is a diode where the ratio of Trrr to Trrf is approximately 1 to 3. These diodes are designed to prevent high dI/dt currents from causing high voltage spikes in circuits with inductors, since Voltage = L(dI/dt).
Let us consider that in any circuit there will always be a certain inductance, even if only parasitic.
Recovery fast diodes are used in switching power supply circuits used in DC/DC converters, power factor correction circuits, motor control and other high switching speed PWM applications where diodes are often required capable of quickly restoring an operating point.
"Fast" and "ultrafast" diodes are so called because they stop conducting current in the opposite direction very quickly. "Soft" is a term applied to a subset of always-fast rectifiers that restore the non-conducting state rapidly, but non-abruptly.
Sanrex
Mosfet & Diode -> SiC Mosfet
SiC (Silicon Carbide) MOSFETs are power transistors built on a wide-bandgap semiconductor that delivers significantly better performance compared to traditional silicon devices. With the ability to operate at high voltages, very high temperatures (beyond 175-200 °C), low on-resistance (RDS(on)), and greatly reduced switching losses, SiC MOSFETs enable smaller heat sinks, enhanced energy efficiency, and more compact system designs. They are well-suited for demanding applications like solar inverters, EV charging stations, industrial power supplies, and motor drives.
Image | Code | VDS [V] | Ifa[A] | Tc [°C] | RDS(on) | Package | |
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FCA100AC120
1200V | 100A | 90°C | 6.8mΩ | Module
|
1200V | 100A | 90°C | 6.8mΩ | Module | SiC MOSFET MODULE 1200V 100A |
FCA150AC120
1200V | 150A | 90°C | 6mΩ | Module
|
1200V | 150A | 90°C | 6mΩ | Module | Sic Mosfet + Mosfet Fca-xb 1200V 150A | |
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FMG50AQ120N6
1200V | 50A | 108°C | 13mΩ | TO-247-4L
|
1200V | 50A | 108°C | 13mΩ | TO-247-4L | SiC MOSFET TO247 INSULATED TYPE |
Mosfet & Diode -> Soft Recovery Diode
Soft Recovery Diodes are designed with a ratio between the reverse recovery time (Trrr) and the current fall time (Trrf) of approximately 1:3. This structure ensures a smooth current transition during switching, helping to reduce voltage spikes caused by high current variations (dI/dt) in circuits with inductance, including parasitic inductances. Thanks to their soft recovery behavior, these diodes minimize electromagnetic interference (EMI) and enhance system reliability, making them ideal for use in converters, inverters, and switching power supplies.
Image | Code | Vrrm [V] | Ifa[A] | Tc [°C] | I2t | Ifsm | Vfm | |
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DBA100UA40
400V | 2X50A | 99°C | 1000A2s | 490A | 1,10V
|
400V | 2X50A | 99°C | 1000A2s | 490A | 1,10V | POWER MODULE SOFT RECOVERY DIODE 400V 2x50A |
DBA200UA40
400V | 2X100A | 96°C | 2100A2s | 700A | 1,05V
|
400V | 2X100A | 96°C | 2100A2s | 700A | 1,05V | POWER MODULE SOFT RECOVERY DIODE 400V 2x100A | |
DBA200UA60
600V | 2X100A | 89°C | 2100A2s | 700A | 1,20V
|
600V | 2X100A | 89°C | 2100A2s | 700A | 1,20V | Power Module Very Soft Recovery Diode 600V 2x100A | |
DBA200WA40
400V | 2X100A | 96°C | 5050A2s | 1000/1100A | 1,10V
|
400V | 2X100A | 96°C | 5050A2s | 1000/1100A | 1,10V | Power Module Soft Recovery Diode 400V 2x100A | |
DBA200WA60
600V | 2X100A | 89°C | 2100A2s | 1000A | 1,25V
|
600V | 2X100A | 89°C | 2100A2s | 1000A | 1,25V | POWER MODULE SOFT RECOVERY DIODE 600V 2x100A | |
DBA200XA20
200V | 2X100A | 97°C | 5000A2s | 1000/1100A | 0,95V
|
200V | 2X100A | 97°C | 5000A2s | 1000/1100A | 0,95V | Power Module Soft Recovery Diode 200V 2x100A | |
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DSR200BA
500V | 200A | 85°C | 45000A2s | 3300A | 1,20V
|
500V | 200A | 85°C | 45000A2s | 3300A | 1,20V | POWER MODULE SOFT RECOVERY DIODE 500V 200A |
Mosfet & Diode -> Fast Recovery Diode
Fast Recovery Diodes (FRD) are designed for high-speed switching applications such as DC/DC converters, power factor correction circuits, motor control, and other high-frequency PWM systems. These diodes can quickly return to their non-conducting state, minimizing losses and voltage spikes during switching.
“Fast” and “ultrafast” diodes are characterized by their ability to stop conducting in the reverse direction very quickly. The term “Soft Recovery” refers to a subset of fast recovery diodes that return to the off state gradually, reducing electromagnetic interference (EMI) and improving circuit reliability.
Image | Code | Vrrm [V] | Ifa[A] | Tc [°C] | I2t | Ifsm | Vfm | |
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DKR200AB60
600V | 200A | 133°C | 54000A2s | 3600A | 1,40V
|
600V | 200A | 133°C | 54000A2s | 3600A | 1,40V | POWER MODULE FAST RECOVERY DIODE 600V 100A |
DKR300AB60
600V | 300A | 124°C | 54000A2s | 3600A | 1,40V
|
600V | 300A | 124°C | 54000A2s | 3600A | 1,40V | POWER MODULE FAST RECOVERY DIODE 600V 150A | |
DKR400AB60
600V | 200A | 122°C | 150000A2s | 6000A | 1,40V
|
600V | 200A | 122°C | 150000A2s | 6000A | 1,40V | POWER MODULE FAST RECOVERY DIODE 600V 200A | |
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FRS400CA120R
1200V | 400A | 78°C | 66640A2s | 4000A | 1.8V
|
1200V | 400A | 78°C | 66640A2s | 4000A | 1.8V | POWER MODULE FAST RECOVERY DIODE 1200V 400A |
FRS400EA200
2000V | 400A | 79°C | 104000A2s | 5000A | 2.2V
|
2000V | 400A | 79°C | 104000A2s | 5000A | 2.2V | POWER MODULE FAST RECOVERY DIODE 2000V 400A | |
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FRS150BA50
500V | 150A | 85°C | 37500A2s | 3000A | 1.3V
|
500V | 150A | 85°C | 37500A2s | 3000A | 1.3V | POWER MODULE FAST RECOVERY DIODE 500V 150A |
FRS300BA50
500V | 300A | 85°C | 66600A2s | 4000A | 1.3V
|
500V | 300A | 85°C | 66600A2s | 4000A | 1.3V | POWER MODULE FAST RECOVERY DIODE 500V 300A | |
FRS300CA50
500V | 300A | 116°C | 66600A2s | 4000A | 1.3V
|
500V | 300A | 116°C | 66600A2s | 4000A | 1.3V | POWER MODULE FAST RECOVERY DIODE 500V 300A | |
FRS400BA60
600V | 400A | 94°C | 66640A2s | 4000A | 1,40V
|
600V | 400A | 94°C | 66640A2s | 4000A | 1,40V | POWER MODULE FAST RECOVERY DIODE 600V 400A | |
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FRS200BA60
600V | 200A | 94°C | 45000A2s | 3300A | 1.3V
|
600V | 200A | 94°C | 45000A2s | 3300A | 1.3V | POWER MODULE FAST RECOVERY DIODE 600V 200A |
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DMG60UL20
200V | 60A | 105°C | 3375A2s | 900A | 1.05V
|
200V | 60A | 105°C | 3375A2s | 900A | 1.05V | Fast Recovery Diode 200V 60A Non Isolated Pk |
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DBA200YA40
400V | 2X100A | 89°C | 5000A2s | 1000/1100A | 1,20V
|
400V | 2X100A | 89°C | 5000A2s | 1000/1100A | 1,20V | Power Module Fast Soft Recovery Diode 400V 2x100A |
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FRD100CA120
1200V | 100A | 78°C | 16600A2s | 2000A | 1.80V
|
1200V | 100A | 78°C | 16600A2s | 2000A | 1.80V | POWER MODULE FAST RECOVERY DIODE 1200V 100A |
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DKR200BE60
600V | 200A | 120°C | 54000A2s | 3600/3200A | 1.14V
|
600V | 200A | 120°C | 54000A2s | 3600/3200A | 1.14V | Power Module Fast Recovery Diode 600V 100A |
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DBA200ZA20
200V | 2X100A | 98°C | 5000A2s | 1000/1100A | 1.0V
|
200V | 2X100A | 98°C | 5000A2s | 1000/1100A | 1.0V | POWER MODULE FAST RECOVERY DIODE 200V 2x100A |
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DKR400CA60
600V | 400A | 105°C | 130000A2s | 5100/5600A | 1.6V
|
600V | 400A | 105°C | 130000A2s | 5100/5600A | 1.6V | POWER MODULE 2 in 1 FAST RECOVERY 400A 600V NON ISOLATED TYPE |
Power Module -> 3-Phase Diode
The 3-Phase Diode allow to improve the voltage and current waveforms both on the mains side (current closest to a sinusoid) and on the load side (more constant voltage). The most used configuration is the bridge one. Configurations can be:
- Half-wave rectifier
- Full wave rectifier (bridge)
There is also the controlled version, in which the diodes are replaced by thyristors. In this case the thyristors are used to differentiate the output voltage by varying the firing angle (or firing delay). The main application of these rectifiers is in the speed control of DC motors.
Image | Code | Vrrm [V] | Ifa[A] | Tc [°C] | I2t | Ifsm | Vfm | |
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DF200AC160
1600V | 200A | 106°C | 26000A2s | 2280/2500A | 1,20V
|
1600V | 200A | 106°C | 26000A2s | 2280/2500A | 1,20V | 3-PHASE DIODE DF-LA 1600V 200A |
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DF20NA80F1/160F1
800-1600V | 20A | 111°C | 500A2S | 320/350A | 1,20V
|
800-1600V | 20A | 111°C | 500A2S | 320/350A | 1,20V | 3-PHASE Diode Df-na 800-1600V 20A |
DF20NA80S1/160S1
20A | 111°C
|
20A | 111°C | 3-PHASE DIODE DF-NA 800-1600V 20A | |||||
DF30NA80F1/160F1
800-1600V | 30A | 92°C | 660A2s | 365/400A | 1,20V
|
800-1600V | 30A | 92°C | 660A2s | 365/400A | 1,20V | 3-PHASE DIODE DF-NA 800-1600V 30A | |
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DF30NA80S/160S
800-1600V | 30A | 92°C | 660A2s | 365/400A | 1,20V
|
800-1600V | 30A | 92°C | 660A2s | 365/400A | 1,20V | 3-PHASE DIODE DF-NA 800-1600V 30A |
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DF100AA120/160
1200-1600V | 100A | 102°C | 4100A2s | 910/1000A | 1,20V
|
1200-1600V | 100A | 102°C | 4100A2s | 910/1000A | 1,20V | 3-PHASE Diode Df-na 1200-1600V 100A |
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DF150AB160
1600V | 150A | 100°C | 6000A2S | 1100/1200A | 1,20V
|
1600V | 150A | 100°C | 6000A2S | 1100/1200A | 1,20V | Power Module 3-PHASE Diode 1600V 150A Isolated Pkg |
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DF200AB160
1600V | 200A | 102°C | 17000A2S | 1850/2000A | 1,20V
|
1600V | 200A | 102°C | 17000A2S | 1850/2000A | 1,20V | Power Module 3-PHASE Diode 1600V 200A Isolated Pkg |
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DF100NB160
1600V | 100A | 98°C | 4100A2s | 910/1000A | 1,16V
|
1600V | 100A | 98°C | 4100A2s | 910/1000A | 1,16V | 3-PHASE Diode Df-nb 1600V 100A |
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DF30AA160
1600V | 30A | 117°C | - | 270/300A | 1.3V
|
1600V | 30A | 117°C | - | 270/300A | 1.3V | 3-PHASE Diode Bridge Type 1600V 30A |
Diode -> Triac -> High Power
Image | Code | Vrrm [V] | Ifa[A] | Tc [°C] | I2t | Ifsm | Vfm | |
---|---|---|---|---|---|---|---|---|
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TMG12D60F
600V | 12A | 79°C | 71A2s | - | -
|
600V | 12A | 79°C | 71A2s | - | - | TO-3P TRIAC 600V 12A |
IGBT - Triac - Rectifier Bridges -> IGBT
IGBT (Insulated Gate Bipolar Transistor) are power electronic devices that combine the advantages of MOSFETs and BJTs, offering high switching speed and the ability to handle high currents and voltages. These devices are ideal for applications such as DC/AC converters, inverters, switching power supplies, and motor control.
SanRex, a brand of SANSHA Electric, is a Japanese manufacturer renowned for the quality and reliability of its IGBT modules. The SanRex product range includes modules such as the GSA75AA120, with a collector-emitter voltage (Vce) of 1200V and a continuous collector current (Ic) of 75A, designed for high-speed switching applications.
These modules offer advantages such as:
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High energy efficiency
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Low switching losses
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Proven reliability
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Wide range of voltages and currents
Image | Code | Vrrm [V] | Ifa[A] | Tc [°C] | I2t | Ifsm | Vfm | |
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GCA100AA120
1200V | 100A | 25°C | - | - | -
|
1200V | 100A | 25°C | - | - | - | Igbt Module 1200V 100A |
Shindengen Electric Manufacturing Co., Ltd.
Mosfet & Diode -> Fast Recovery Diode
Fast Recovery Diodes (FRD) are designed for high-speed switching applications such as DC/DC converters, power factor correction circuits, motor control, and other high-frequency PWM systems. These diodes can quickly return to their non-conducting state, minimizing losses and voltage spikes during switching.
“Fast” and “ultrafast” diodes are characterized by their ability to stop conducting in the reverse direction very quickly. The term “Soft Recovery” refers to a subset of fast recovery diodes that return to the off state gradually, reducing electromagnetic interference (EMI) and improving circuit reliability.
Mosfet & Diode -> Mosfet
Silicon MOSFETs (Si‑MOSFETs) are widely used power transistors for efficient control of current and voltage in electronic circuits. With high switching speed, low on-resistance (RDS(on)), and the ability to handle high currents, silicon MOSFETs are ideal for applications such as switching power supplies, DC/DC converters, motor control, and energy management systems. Their reliability and versatility make them essential components in modern power electronics.
Image | Code | VDS [V] | Ifa[A] | Tc [°C] | RDS(on) | Package | |
---|---|---|---|---|---|---|---|
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P232LG10GN
100V | 232A | 25°C | 1.83mΩ | TOLL
|
100V | 232A | 25°C | 1.83mΩ | TOLL | POWER MOSFET 100V 232A@25°C 1.83mOhm N-CH TOLL-9.8x11.68mm SMD |
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P30W60HP2V
600V | 30A | 25°C | 185mΩ | TO-247AD
|
600V | 30A | 25°C | 185mΩ | TO-247AD | POWER MOSFET 600V 30A@25°C 185mΩ N-channel MTO-3PV (TO-247AD) |
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MG031L080006A
60V | 80A | 25°C | 3.74mΩ | MG031
|
60V | 80A | 25°C | 3.74mΩ | MG031 | 3 phase Inverter Module 60V 80A |
MG031MD110006A
60V | 110A | 25°C | 2.40mΩ | MG031
|
60V | 110A | 25°C | 2.40mΩ | MG031 | MOSFET Array 60V 110A |