SDS120J040H3

Certifications title

Mosfet & Diode Diodi SiC
SiC Diode 1200V 98/47/40A@25/135/145°C 3rd Gen. TO-247-2L

Documentation

Type

Mosfet & Diode Diodi SiC
Brand name

Sanan Semiconductor Co., Ltd
Vrrm [V]

1200V
Ifa[A]

98A
Tc [°C]

25°C
I2t

666A2s
Ifsm

365A
Vfm

1.40V
Data sheet

SDS120J040H3.pdf

Sanan Semiconductor Co., Ltd

Mosfet & Diode -> Diodi SiC

Silicon Carbide (SiC) diodes are high-efficiency power devices designed using wide-bandgap semiconductor material, delivering performance far superior to traditional silicon diodes. They feature very high breakdown voltages, low forward voltage drop (VF), negligible reverse recovery charge, and stable operation over broad temperature ranges (up to ~175-200 °C). These traits reduce switching losses, thermal dissipation, and the size of heat sinks and passive components, resulting in higher power density, improved efficiency, and greater system reliability. SiC diodes are ideal for applications such as switching power supplies, photovoltaic inverters, EV chargers, industrial equipment, and power factor correction.

Code	Vrrm [V]	Ifa[A]	Tc [°C]	I2t	Ifsm	Vfm
ADS065J020H3 650V \| 51A \| 25°C \| 98A2s \| 140A \| 1.35V	650V	51A	25°C	98A2s	140A	1.35V	SiC Diode 650V 51/2520A@25/135/150°C 3rd Gen. TO-247-2L AEC-Q101
SDS065J016H3 650V \| 44A \| 25°C \| 91A2s \| 135A \| 1.3V	650V	44A	25°C	91A2s	135A	1.3V	SiC Diode 650V 44/21/16A@25/135/152°C 3rd Gen. TO-247-2L
SDS065J020H3 650V \| 51A \| 25°C \| 98A2s \| 140A \| 1.35V	650V	51A	25°C	98A2s	140A	1.35V	SiC Diode 650V 51/25/20A@25/135/150°C 3rd Gen. TO-247-2L
SDS120J040H3 1200V \| 98A \| 25°C \| 666A2s \| 365A \| 1.40V	1200V	98A	25°C	666A2s	365A	1.40V	SiC Diode 1200V 98/47/40A@25/135/145°C 3rd Gen. TO-247-2L
SDS065J020M4 650V \| 40A \| 25°C \| 91A2s \| 135A \| 1.3V	650V	40A	25°C	91A2s	135A	1.3V	SiC Diode 650V 40/21/20A@25/138/135°C 4th Gen. TO-247N-3L Isol. Tab
SDS120J020G3 1200V \| 72A \| 25°C \| 53A2s \| 103A \| 1.35V	1200V	72A	25°C	53A2s	103A	1.35V	SiC Diode 1200V 72/34/20A@25/135/155°C per Device 3rd Gen. TO-247-3L
SDS120J020G5 1200V \| 60A \| 25°C \| 70A2s \| 118A \| 1.40V	1200V	60A	25°C	70A2s	118A	1.40V	SiC Diode 1200V 60/30/20A@25/135/155°C per Device 5th Gen. TO-247-3L
SDS120J030G5 1200V \| 82A \| 25°C \| 118A2s \| 154A \| 1.40V	1200V	82A	25°C	118A2s	154A	1.40V	SiC Diode 1200V 82/42/30A@25/135/155°C per Device 5th Gen. TO-247-3L
SLS065J100A 650V \| 164A \| 25°C \| 2450A2S \| 700A \| 1.45V	650V	164A	25°C	2450A2S	700A	1.45V	SiC Diode 650V164/103/100A@25/110/114°C 3rd Gen. SOT-227
SLS120J060A 1200V \| 115A \| 25°C \| 1152A2S \| 480A \| 1.40V	1200V	115A	25°C	1152A2S	480A	1.40V	SiC Diode 1200V 115/69/60A@25/110/126°C 3rd Gen. SOT-227
SLS120J080A 1200V \| 156A \| 25°C \| 2048A2S \| 640A \| 1.40V	1200V	156A	25°C	2048A2S	640A	1.40V	SiC Diode 1200V 156/94/80A@25/110/128°C 3rd Gen. SOT-227
SLS120J100A 1200V \| 195A \| 25°C \| 3200A2S \| 800A \| 1.40V	1200V	195A	25°C	3200A2S	800A	1.40V	SiC Diode 1200V 195/117/100A@25/110/128°C 3rd Gen. SOT-227
SDS065J006C4 650V \| 20A \| 25°C \| 10A2s \| 46A \| 1.27V	650V	20A	25°C	10A2s	46A	1.27V	SiC Diode 650V 20/10/6A@25/135/153°C 4rd Gen. TO-220-2L
SDS065J006N4 650V \| 17A \| 25°C \| 10A2s \| 46A \| 1.27V	650V	17A	25°C	10A2s	46A	1.27V	SiC Diode 650V 17/8/6A@25/135/154°C 4rd Gen. TO-220N-2L
SDS065J016F3 650V \| 25A \| 25°C \| 73A2S \| 121A \| 1.3V	650V	25A	25°C	73A2S	121A	1.3V	SiC Diode 650V 25/16/12A@25/110/135°C 3rd Generation TO-220F-2L Isol. Tab
SDS065J020F4 650V \| 29A \| 25°C \| 74A2s \| 122A \| 1.3V	650V	29A	25°C	74A2s	122A	1.3V	SiC Diode 650V 29/20/15A@25/101/135°C 4th Gen. TO-220F-2L Isol. Tab
SDS065J012S3 650V \| 44A \| 25°C \| 58A2s \| 108A \| 1,50V	650V	44A	25°C	58A2s	108A	1,50V	SiC Diode 650V 44/21/12A@25/135/155°C 3rd Gen. DFN 8x8-4L