SiC Mosfet
Sanrex
Mosfet & Diode, SiC Mosfet
SiC (Silicon Carbide) MOSFETs are power transistors built on a wide-bandgap semiconductor that delivers significantly better performance compared to traditional silicon devices. With the ability to operate at high voltages, very high temperatures (beyond 175-200 °C), low on-resistance (RDS(on)), and greatly reduced switching losses, SiC MOSFETs enable smaller heat sinks, enhanced energy efficiency, and more compact system designs. They are well-suited for demanding applications like solar inverters, EV charging stations, industrial power supplies, and motor drives.
Image | Code | VDS [V] | Ifa[A] | Tc [°C] | RDS(on) | Package |
---|---|---|---|---|---|---|
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FCA100AC120
1200V | 100A | 90°C | 6.8mΩ | Module
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1200V | 100A | 90°C | 6.8mΩ | Module |
FCA150AC120
1200V | 150A | 90°C | 6mΩ | Module
|
1200V | 150A | 90°C | 6mΩ | Module | |
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FMG50AQ120N6
1200V | 50A | 108°C | 13mΩ | TO-247-4L
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1200V | 50A | 108°C | 13mΩ | TO-247-4L |
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