SiC Mosfet

Sanrex

Mosfet & Diode, SiC Mosfet

SiC (Silicon Carbide) MOSFETs are power transistors built on a wide-bandgap semiconductor that delivers significantly better performance compared to traditional silicon devices. With the ability to operate at high voltages, very high temperatures (beyond 175-200 °C), low on-resistance (RDS(on)), and greatly reduced switching losses, SiC MOSFETs enable smaller heat sinks, enhanced energy efficiency, and more compact system designs. They are well-suited for demanding applications like solar inverters, EV charging stations, industrial power supplies, and motor drives.

Image Code VDS [V] Ifa[A] Tc [°C] RDS(on) Package
pALdp0vh4FavgYH FCA100AC120

1200V
|
100A
|
90°C
|
6.8mΩ
|
Module

1200V 100A 90°C 6.8mΩ Module
FCA150AC120

1200V
|
150A
|
90°C
|
6mΩ
|
Module

1200V 150A 90°C 6mΩ Module
qESuQ7SOP4HhjQ3 FMG50AQ120N6

1200V
|
50A
|
108°C
|
13mΩ
|
TO-247-4L

1200V 50A 108°C 13mΩ TO-247-4L

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