Diodi SiC

Silicon Carbide (SiC) diodes are high-efficiency power devices designed using wide-bandgap semiconductor material, delivering performance far superior to traditional silicon diodes. They feature very high breakdown voltages, low forward voltage drop (VF), negligible reverse recovery charge, and stable operation over broad temperature ranges (up to ~175-200 °C). These traits reduce switching losses, thermal dissipation, and the size of heat sinks and passive components, resulting in higher power density, improved efficiency, and greater system reliability. SiC diodes are ideal for applications such as switching power supplies, photovoltaic inverters, EV chargers, industrial equipment, and power factor correction.