No compromises on thermal management - SiC Mosfet FMG50AQ120
24 October 2022
SiC Mosfet FMG50AQ120 In discrete 4-Pin Package
FMG50AQ120 in an isolated TO-247-4L package. Besides its powerfulness and the small and easily applicable structure, you can learn more about the discrete 4-Pin SiC MOSFET’s oth
er extraordinary features in the following.
This structure reduces the impact of the source terminal’s inductance as well as allows faster switching and lower loss. In benchmark, the product is able to operate in frequencies of over 500kHz.
In order to improve performance, we introduce a new, innovative method of clip bonding on the chip. Compared to a more conventional technique of wire bonding covering only a small portion of the chip, clip bonding covers the chip completely, which enables more efficient flow of power. Clip bonding technique also decreases the inductance loss.
