SDS065J020M4

Contattaci

Titolo certificazioni

Mosfet & Diodi Diodi SiC
SiC Diode 650V 40/21/20A@25/138/135°C 4th Gen. TO-247N-3L Isol. Tab

Documentazione

Tipo

Mosfet & Diodi Diodi SiC
Marchio

Sanan Semiconductor Co., Ltd
Vrrm [V]

650V
Ifa[A]

40A
Tc [°C]

25°C
I2t

91A2s
Ifsm

135A
Vfm

1.3V
Scheda tecnica

SDS065J020M4.pdf

Sanan Semiconductor Co., Ltd

Mosfet & Diodi -> Diodi SiC

I diodi in SiC (Silicon Carbide) sono dispositivi ad elevata efficienza progettati con materiali wide-bandgap che garantiscono prestazioni superiori rispetto ai diodi tradizionali al silicio. Offrono tensione di rottura molto alta, caduta di tensione diretta (VF) ridotta, nessuna o quasi nessuna carica di recupero inverso (reverse recovery), e stabilità operativa su ampie gamme di temperatura fino a ~175-200 °C. Queste caratteristiche permettono di ridurre le perdite di commutazione, il calore generato, le dimensioni dei dissipatori e dei componenti passivi, aumentando così l’affidabilità, la densità di potenza e l’efficienza del sistema. Sono ideali per applicazioni quali alimentatori switching, inverter fotovoltaici, caricabatterie EV, sistemi industriali e power factor correction (PFC

Codice	Vrrm [V]	Ifa[A]	Tc [°C]	I2t	Ifsm	Vfm
ADS065J020H3 650V \| 51A \| 25°C \| 98A2s \| 140A \| 1.35V	650V	51A	25°C	98A2s	140A	1.35V	SiC Diode 650V 51/2520A@25/135/150°C 3rd Gen. TO-247-2L AEC-Q101
SDS065J016H3 650V \| 44A \| 25°C \| 91A2s \| 135A \| 1.3V	650V	44A	25°C	91A2s	135A	1.3V	SiC Diode 650V 44/21/16A@25/135/152°C 3rd Gen. TO-247-2L
SDS065J020H3 650V \| 51A \| 25°C \| 98A2s \| 140A \| 1.35V	650V	51A	25°C	98A2s	140A	1.35V	SiC Diode 650V 51/25/20A@25/135/150°C 3rd Gen. TO-247-2L
SDS120J040H3 1200V \| 98A \| 25°C \| 666A2s \| 365A \| 1.40V	1200V	98A	25°C	666A2s	365A	1.40V	SiC Diode 1200V 98/47/40A@25/135/145°C 3rd Gen. TO-247-2L
SDS065J020M4 650V \| 40A \| 25°C \| 91A2s \| 135A \| 1.3V	650V	40A	25°C	91A2s	135A	1.3V	SiC Diode 650V 40/21/20A@25/138/135°C 4th Gen. TO-247N-3L Isol. Tab
SDS120J020G3 1200V \| 72A \| 25°C \| 53A2s \| 103A \| 1.35V	1200V	72A	25°C	53A2s	103A	1.35V	SiC Diode 1200V 72/34/20A@25/135/155°C per Device 3rd Gen. TO-247-3L
SDS120J020G5 1200V \| 60A \| 25°C \| 70A2s \| 118A \| 1.40V	1200V	60A	25°C	70A2s	118A	1.40V	SiC Diode 1200V 60/30/20A@25/135/155°C per Device 5th Gen. TO-247-3L
SDS120J030G5 1200V \| 82A \| 25°C \| 118A2s \| 154A \| 1.40V	1200V	82A	25°C	118A2s	154A	1.40V	SiC Diode 1200V 82/42/30A@25/135/155°C per Device 5th Gen. TO-247-3L
SLS065J100A 650V \| 164A \| 25°C \| 2450A2S \| 700A \| 1.45V	650V	164A	25°C	2450A2S	700A	1.45V	SiC Diode 650V164/103/100A@25/110/114°C 3rd Gen. SOT-227
SLS120J060A 1200V \| 115A \| 25°C \| 1152A2S \| 480A \| 1.40V	1200V	115A	25°C	1152A2S	480A	1.40V	SiC Diode 1200V 115/69/60A@25/110/126°C 3rd Gen. SOT-227
SLS120J080A 1200V \| 156A \| 25°C \| 2048A2S \| 640A \| 1.40V	1200V	156A	25°C	2048A2S	640A	1.40V	SiC Diode 1200V 156/94/80A@25/110/128°C 3rd Gen. SOT-227
SLS120J100A 1200V \| 195A \| 25°C \| 3200A2S \| 800A \| 1.40V	1200V	195A	25°C	3200A2S	800A	1.40V	SiC Diode 1200V 195/117/100A@25/110/128°C 3rd Gen. SOT-227
SDS065J006C4 650V \| 20A \| 25°C \| 10A2s \| 46A \| 1.27V	650V	20A	25°C	10A2s	46A	1.27V	SiC Diode 650V 20/10/6A@25/135/153°C 4rd Gen. TO-220-2L
SDS065J006N4 650V \| 17A \| 25°C \| 10A2s \| 46A \| 1.27V	650V	17A	25°C	10A2s	46A	1.27V	SiC Diode 650V 17/8/6A@25/135/154°C 4rd Gen. TO-220N-2L
SDS065J016F3 650V \| 25A \| 25°C \| 73A2S \| 121A \| 1.3V	650V	25A	25°C	73A2S	121A	1.3V	SiC Diode 650V 25/16/12A@25/110/135°C 3rd Generation TO-220F-2L Isol. Tab
SDS065J020F4 650V \| 29A \| 25°C \| 74A2s \| 122A \| 1.3V	650V	29A	25°C	74A2s	122A	1.3V	SiC Diode 650V 29/20/15A@25/101/135°C 4th Gen. TO-220F-2L Isol. Tab
SDS065J012S3 650V \| 44A \| 25°C \| 58A2s \| 108A \| 1,50V	650V	44A	25°C	58A2s	108A	1,50V	SiC Diode 650V 44/21/12A@25/135/155°C 3rd Gen. DFN 8x8-4L